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1

alloy layers

Kringho/j, Per, Larsen, Arne Nylandsted

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 165 KB

english, 1995

2

Symposium I: Silicon and germanium issues for future CMOS devices

Lourdes Pelaz, Salvo Mirabella, Arne Nylandsted Larsen

Journal:

Thin Solid Films

Année:

2010

Langue:

english

Fichier:

PDF, 83 KB

english, 2010

3

Optimization of Er3+-doped TiO2-thin films for infrared light up-conversion

Johannsen, Sabrina R., Lauridsen, Lasse Rosenfeld, Julsgaard, Brian, Neuvonen, Pekka T., Ram, Sanjay K., Larsen, Arne Nylandsted

Journal:

Thin Solid Films

Année:

2014

Langue:

english

Fichier:

PDF, 1014 KB

english, 2014

4

On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation

Nikolaj Zangenberg, Jean-Jacques Goubet, Arne Nylandsted Larsen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2002

Langue:

english

Fichier:

PDF, 281 KB

english, 2002

5

Dyadic Green’s functions of thin films: Applications within plasmonic solar cells

Jung, Jesper, Søndergaard, Thomas, Pedersen, Thomas Garm, Pedersen, Kjeld, Larsen, Arne Nylandsted, Nielsen, Brian Bech

Journal:

Physical Review B

Année:

2011

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2011

6

Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS

Nielsen, Jacob, Nielsen, K. Bonde, Larsen, Arne Nylandsted

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 271 KB

1989

7

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors

Nylandsted-Larsen, Arne, Petersen, J.W., Weyer, G.

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 571 KB

1989

8

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon

Weyer, G., Nylandsted-Larsen, Arne, Pedersen, F.T., Galloni, R., Rizzoli, R.

Journal:

Materials Science Forum

Année:

1986

Fichier:

PDF, 334 KB

1986

9

Plasmonically enhanced upconversion of 1500 nm light via trivalent Er in a TiO 2 matrix

Lakhotiya, Harish, Nazir, Adnan, Madsen, Søren P., Christiansen, Jeppe, Eriksen, Emil, Vester-Petersen, Joakim, Johannsen, Sabrina R., Jeppesen, Bjarke Rolighed, Balling, Peter, Larsen, Arne Nylandste

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2016

10

Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface

Juluri, Raghavendra Rao, Gaiduk, Peter, Hansen, John Lundsgaard, Larsen, Arne Nylandsted, Julsgaard, Brian

Journal:

Thin Solid Films

Année:

2018

Langue:

english

Fichier:

PDF, 5.48 MB

english, 2018

11

Anomalous behavior of electrically active defects near E C −0.5 eV in MOCVD, as-grown GaN

Boturchuk, Ievgen, Scheffler, Leopold, Larsen, Arne Nylandsted, Julsgaard, Brian

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2019

12

Epitaxial growth of Ge and SiGe on Si substrates

Arne Nylandsted Larsen

Journal:

Materials Science in Semiconductor Processing

Année:

2006

Langue:

english

Fichier:

PDF, 425 KB

english, 2006

13

The hidden secrets of the E-center in Si and Ge

Arne Nylandsted Larsen, Abdelmadjid Mesli

Journal:

Physica B: Condensed Matter

Année:

2007

Langue:

english

Fichier:

PDF, 354 KB

english, 2007

14

Chemical bath deposition of PbS nanocrystals: Effect of substrate

Alex P. Gaiduk, Peter I. Gaiduk, Arne Nylandsted Larsen

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 409 KB

english, 2008

15

Defects in epitaxial SiGe-alloy layers

Arne Nylandsted Larsen

Journal:

Materials Science and Engineering: B

Année:

2000

Langue:

english

Fichier:

PDF, 400 KB

english, 2000

16

Tuning the plasmon resonance of metallic tin nanocrystals in

Mads Møgelmose Kjeldsen, John Lundsgaard Hansen, Thomas Garm Pedersen, Peter Gaiduk, Arne Nylandsted Larsen

Journal:

Applied Physics A: Materials Science & Processing

Année:

2010

Langue:

english

Fichier:

PDF, 639 KB

english, 2010

17

The effect of biaxial strain on impurity diffusion in Si and SiGe

Arne Nylandsted Larsen, Nikolaj Zangenberg, Jacob Fage-Pedersen

Journal:

Materials Science and Engineering: B

Année:

2005

Langue:

english

Fichier:

PDF, 134 KB

english, 2005

18

On localized surface plasmons of metallic tin nanoparticles in silicon

Jesper Jung, Thomas Garm Pedersen, Thomas Søndergaard, Kjeld Pedersen, Arne Nylandsted Larsen, Brian Bech Nielsen

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2010

Langue:

english

Fichier:

PDF, 298 KB

english, 2010

19

Ion implanted arsenic in silicon

Arne Nylandsted Larsen, Birgit Christensen, Peter H. Christensen, Sergey Yu. Shiryaev

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 346 KB

english, 1993

20

Channeling studies of relaxed, epitaxial Si1−xGex films

Edouard V. Monakhov, Arne Nylandsted Larsen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 322 KB

english, 1996

21

Monte Carlo simulation of α-particle channeling in relaxed SiGe films

Edouard V. Monakhov, Arne Nylandsted Larsen

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 532 KB

english, 1996

22

Preface

Francesco Priolo, Jörg K.N. Lindner, Arne Nylandsted Larsen, John M. Poate

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1996

Langue:

english

Fichier:

PDF, 71 KB

english, 1996

23

Assessing the role of iron-acceptor pairs in solar grade multicrystalline silicon wafers from the metallurgical route

Espen Hvidsten Dahl, Viktor Osinniy, Kenneth Friestad, Anne-Karin Søiland, Yakov Safir, Wolgang Skorupa, Ragnar Tronstad, Arne Nylandsted Larsen

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 607 KB

english, 2012

24

Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

Uhrenfeldt, Christian, Chevallier, Jacques, Larsen, Arne Nylandsted, Nielsen, Brian Bech

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 2.17 MB

english, 2011

25

Plasmonic Properties ofβ-Sn Nanoparticles in Ordered and Disordered Arrangements

Johansen, Britta, Uhrenfeldt, Christian, Nylandsted Larsen, Arne

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 347 KB

english, 2013

26

Tuning Plasmon Resonances for Light Coupling into Silicon: a “Rule of Thumb” for Experimental Design

Uhrenfeldt, Christian, Villesen, ThorbjÃ¸rn Falk, Johansen, Britta, Pedersen, Thomas Garm, Nylandsted Larsen, Arne

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2013

27

Aluminum nanoparticles for plasmon-improved coupling of light into silicon

Villesen, T F, Uhrenfeldt, Christian, Johansen, B, Hansen, J Lundsgaard, Ulriksen, H U, Larsen, Arne Nylandsted

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 435 KB

english, 2012

28

Zero- and one-dimensional nanostructures on an surface

Jensen, Flemming, Petersen, Jon Wulff, Shiryaev, Sergey Y, Larsen, Arne Nylandsted

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 340 KB

english, 1996

29

-Sn nanoparticles

Johansen, Britta, Uhrenfeldt, Christian, Larsen, Arne Nylandsted, Pedersen, Thomas Garm, Ulriksen, Hans Ulrik, Kristensen, Peter Kjær, Jung, Jesper, Søndergaard, Thomas, Pedersen, Kjeld

Journal:

Physical Review B

Année:

2011

Langue:

english

Fichier:

PDF, 442 KB

english, 2011

30

Ab initio calculation of electronic and optical properties of metallic tin

Pedersen, Thomas G, Modak, Paritosh, Pedersen, Kjeld, Christensen, Niels E, Kjeldsen, Mads M, Larsen, Arne Nylandsted

Journal:

Journal of Physics Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 753 KB

english, 2009

31

Fibronectin Adsorption, Cell Adhesion, and Proliferation on Nanostructured Tantalum Surfaces

Dolatshahi-Pirouz, A., Jensen, T., Kraft, David Christian, Foss, Morten, Kingshott, Peter, Hansen, John Lundsgaard, Larsen, Arne Nylandsted, Chevallier, Jacques, Besenbacher, Flemming

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 1.99 MB

english, 2010

32

Infrared upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films

Neuvonen, Pekka T., Sigvardt, Kristian, Johannsen, Sabrina R., Chevallier, Jacques, Julsgaard, Brian, Ram, Sanjay K., Nylandsted Larsen, Arne

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 865 KB

english, 2014

33

Electrostatic plasmon resonances of metal nanospheres in layered geometries

Jung, Jesper, Pedersen, Thomas Garm, Søndergaard, Thomas, Pedersen, Kjeld, Larsen, Arne Nylandsted, Nielsen, Brian Bech

Journal:

Physical Review B

Année:

2010

Langue:

english

Fichier:

PDF, 408 KB

english, 2010

34

Diffusion of Sb in relaxed Si1−xGex

Larsen, Arne Nylandsted, Kringho̸j, Per

Journal:

Applied Physics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 333 KB

english, 1996

35

Activation volume for phosphorus diffusion in silicon and Si[sub 0.93]Ge[sub 0.07]

Zhao, Yuechao, Aziz, Michael J., Zangenberg, Nikolaj R., Larsen, Arne Nylandsted

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 307 KB

english, 2005

36

Diffusion of Sb in Strained and Relaxed Si and SiGe

Kringhøj, Per, Larsen, Arne Nylandsted, Shirayev, Sergey Yu.

Journal:

Physical Review Letters

Année:

1996

Langue:

english

Fichier:

PDF, 140 KB

english, 1996

37

Anomalous diffusion of tin in silicon

Kringhøj, Per, Larsen, Arne Nylandsted

Journal:

Physical Review B

Année:

1997

Langue:

english

Fichier:

PDF, 91 KB

english, 1997

38

Point defect injection into silicon due to low-temperature surface modifications

Christensen, Carsten, Petersen, Jon Wulff, Larsen, Arne Nylandsted

Journal:

Applied Physics Letters

Année:

1992

Langue:

english

Fichier:

PDF, 582 KB

english, 1992

39

Thermalization of exciton states in silicon nanocrystals

Julsgaard, Brian, Lu, Ying-Wei, Balling, Peter, Larsen, Arne Nylandsted

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 364 KB

english, 2009

40

Sn-Background-Induced Diffusion Enhancement of Sb in Si

Fage-Pedersen, Jacob, Larsen, Arne Nylandsted, Gaiduk, Peter, Hansen, John Lundsgaard, Linnarsson, Margareta

Journal:

Physical Review Letters

Année:

1998

Langue:

english

Fichier:

PDF, 305 KB

english, 1998

41

Comparative study of defect evolution in carbon implanted strained SiGe and SiSn layers

Gaiduk, Peter I., Lundsgaard Hansen, John, Nylandsted Larsen, Arne, Skorupa, Wolfgang

Journal:

Physica status solidi

Année:

2015

Langue:

english

Fichier:

PDF, 390 KB

english, 2015

42

Self-assembled Au dots in SiGe/Si layers for plasmonic application

Gaiduk, Peter I., Larsen, Arne Nylandsted

Journal:

physica status solidi (a)

Année:

2014

Langue:

english

Fichier:

PDF, 641 KB

english, 2014

43

Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures

Silvestri, Hughes H., Bracht, Hartmut A., Sharp, Ian D., Hansen, John, Nylandsted-Larsen, Arne, Haller, Eugene E.

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 99 KB

english, 2004

44

Substitutional Carbon in Ge and Si1-xGex.

Hoffmann, L., Bach, J.C., Hansen, J. Lundsgaard, Larsen, Arne Nylandsted, Nielsen, Brian Bech, Leary, P., Jones, R., Öberg, Sven

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 454 KB

1997

45

Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures

Larsen, Arne Nylandsted

Journal:

Solid State Phenomena

Année:

1999

Langue:

english

Fichier:

PDF, 756 KB

english, 1999

46

Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results

Larsen, K.K., Larsen, Arne Nylandsted

Journal:

Materials Science Forum

Année:

1991

Fichier:

PDF, 400 KB

1991

47

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

Weyer, G., Fanciulli, M., Freitag, Kristian, Nylandsted-Larsen, Arne, Lindroos, M., Müller, E., Vestergaard, H.C.

Journal:

Materials Science Forum

Année:

1995

Fichier:

PDF, 378 KB

1995

48

Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect

Mesli, A., Kringhøj, P., Larsen, Arne Nylandsted

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 492 KB

1997

49

Defects in SiGe

Nylandsted-Larsen, Arne

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 525 KB

1997

50

Passivation of Ge Nanocrystals in SiO2

Jensen, Jesper Skov, Leervad Pedersen, Tom P., Pereira, Rui, Bomholt, Pia, Chevallier, Jacques, Hansen, Ole, Larsen, Arne Nylandsted, Nielsen, Brian Bech

Journal:

Solid State Phenomena

Année:

2005

Langue:

english

Fichier:

PDF, 365 KB

english, 2005